KC807-16
KC807-16 is PNP Silicon AF Transistors manufactured by Kexin Semiconductor.
Features
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage.
0.95+0.1 -0.1 1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PD Tj Tstg
Rating -50 -45 -5 -800 310 150
-65 to +150
Unit V V V m A m W
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current
DC current gain
- Collector saturation voltage
- Base emitter on voltage Output Capacitance...
