FEATURES
For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 30 25 5 800 310 150 -65 to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base emitter on voltage Output Capacitance Transition frequency * Pulsed: PW 350 ìs, duty cycle 2% Symbol VCBO VCEO VEBO ICES IEBO hFE IC =300 mA, VCE =1 V VCE(sat) IC =500 mA, IB = 50 mA VBE(on) VCE=1V,IC=300mA Cob fT VCB=10V...