KC857B Datasheet | Kexin Semiconductor

Features +0.1 2.4-0.1 +0.1 0.95-0.1 +0.1 1.9-0.1 For Switching and AF Amplifier Applications +0.1 1.3-0.1 Ideally suited for automatic insertion +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter KC856 Collector-Base Voltage KC857 KC858 KC856 Collector-Emitter Voltage KC857 KC858 Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature VEBO IC PC TJ Tstg VCEO VCBO Symbol Rating -80 -50 -30 -65 -45 -30 -5 -0.1 200 150 -65 to +150 V A m W V V Unit +0.1 0.38-0.1 0-0.1 .kexin..cn Free Datasheet http://../ SMD Type KC856A,B/KC857A,B,C/KC858A,B,C (BC856A,B/BC857A,B,C/BC858A,B,C) Symbol KC856 Collector-base breakdown voltage KC857 KC858 KC856 Collector-emitter breakdown voltage KC857 KC858 Emitter-base breakdown voltage KC856 Collector cut-off current KC857 KC858 KC856 Collector cut-off current KC857 KC858 Emitter cut-off current KC856A, 857A,858A DC current gain KC856B, 857B,858B KC857C,KC858C Collector-emitter saturation voltage Base-emitter saturation voltage Collector capacitance Transition frequency VCE(sat) IC=-100m A, IB= -5 m A VBE(sat) IC= -100 m A, IB= -5m A Cob f T VCB=-10V,f=1MHz VCE= -5 V, IC= 10m A,f=100MHz 100 h FE VCE= -5V, IC= -2m A IEBO ICEO ICBO VEBO IE= -10ìA, IC=0 VCB= -70 V , IE=0 VCB= -45 V , IE=0 VCB= -25 V , IE=0 VCE= -60 V , IB=0 VCE= -40 V , IB=0 VCE= -25 V , IB=0 VEB= -5 V , IC=0 120 220 420 VCEO Ic= -10 m A, IB=0 VCBO Ic= -10ìA, IE=0 Testconditons Transistors Electrical Characteristics Ta = 25 Parameter Min -80 -50 -30 -65 -45 -30 -5 V V V Typ Max Unit -0.1 -0.1 -0.1 250 475 800 -0.5 -1.1 4.5 V V p F MHz Marking NO. Marking NO. Marking NO. Marking KC856A 3A KC857A 3E KC858A 3J KC856B 3B KC857B 3F KC858B 3K KC857C 3G KC858C 3L .kexin..cn Free Datasheet...