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KDB4020P - P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

Features

  • -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source volt.

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Datasheet Details

Part number KDB4020P
Manufacturer Kexin Semiconductor
File Size 47.32 KB
Description P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor
Datasheet download datasheet KDB4020P Datasheet

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Full PDF Text Transcription

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SMD Type MOSFET P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V RDS(on) = 0.11 Ù @ VGS = -2.5 V. Critical DC electrical parameters specified at elevated temperature. High density cell design for extremely low RDS(on). +0.25.28 -0.2 +0.28.7 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +0.11.27 -0.1 +0.22.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.
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