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KDB7045L - N-Channel MOSFET

Features

  • 100 A, 30 V. RDS(ON) = 0.0045 @ VGS = 10 V RDS(ON) = 0.006 @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor High performance trench technology for extremely low RDS(ON) 175 maximum junction temperature rating +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+.

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Full PDF Text Transcription

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SMD Type TransistIoCrs N-Channel Logic Level PowerTrench MOSFET KDB7045L Features 100 A, 30 V. RDS(ON) = 0.0045 @ VGS = 10 V RDS(ON) = 0.006 @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor High performance trench technology for extremely low RDS(ON) 175 maximum junction temperature rating +5 .2 8 0.2 -0.2 +8 .7 0.2 -0.2 TO-263 +0.2 4.57+0.1 -0.2 1.27-0.1 Unit: mm +1 .2 7 0.1 -0.1 5.60 + 0 .2 -0.2 1.27+0.1 -0.1 0.1max 2.54 5.08+0.2 -0.2 +0.1 -0.1 0.81+0.1 -0.1 2.54 +2 .5 4 0.2 -0.2 0.4+0.2 -0.2 1 5 .
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