KDT4N65P Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 650V ƽ ID = .0 A (VGS = 10V) ƽ RDS(ON) ˘ 3¡ (VGS = 10V) 72 1 23 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current ( - a) ( - a) Ta=25ć Ta=100ć Power Dissipation Single Pulsed Avalanche Energy Ta=25ć Derate above 25ć ( - b) Repetitive Avalanche Energy ( - a) Peak Diode Recovery dv/dt ( - c) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Thermal Resistance.Case-to-Sink Typ Maximum lead Temperature for soldering purpose, 1/8 from case for 5 seconds Junction Temperature Storage Temperature Range Symbol VDS VGS IDM IAR EAS EAR dv/dt Rth JA Rth JC Rth JS TJ Tstg Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b.IAS=4.5A,VDD=50V,RG=25ȍ,Starting TJ=25ć c.ISDİ4.5A,di/dtİ200A/us,VDDİBVDSS,Starting...