KDV303N Datasheet | Kexin Semiconductor

Features - 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V RDS(ON) = 0.6Ω @ VGS = 2.7 V. - Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. - Gate-Source Zener for ESD ruggedness. ＞6k V Human Body Model +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 Unit: mm 0.1+0.05 -0.01 11..BGasae te 22.ESmoituterrce 33..c Dollreactionr - Absolute Maximum Ratings Ta = 25℃ Parameter Drain to Source Voltage Gate to Source Voltage Drain Current- Continuous Drain Current- pulse Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to- Ambient Symbol VDSS VGSS PD TJ, Tstg RθJA Rating 25 8 0.68 2 0.35 -55 to +150 357 Unit V V A A W ℃ ℃/W 1 .kexin..cn SMD Type MOSFIECT - Electrical Characteristics Ta = 25℃ Parameter Symbol...