KDW258P Datasheet | Kexin Semiconductor

Features -9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V RDS(ON) = 14m @ VGS =-2.5V RDS(ON) = 20m @ VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON) Low gate charge Low profile TSSOP-8 package TSSOP-8 Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dissipation for Single Operation (Note 1b) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Ambient (Note 1b) Symbol VDSS VGS ID TJ, TSTG R JA R JA Rating -12 8 -9 -50 1.3 0.6 -55 to 150 87 114 Unit V V A A W /W /W .kexin..cn 1 SMD Type ICIC Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse Gate Threshold Voltage(Not 2) Gate Threshold Voltage Temperature Coefficient(Not 2) Static Drain-Source On-Resistance(Not 2) On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol BVDSS Testconditons VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 IDSS IGSSF IGSSR VGS(th) VDS = -10 V, VGS = 0 V VGS = 8V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A Min Typ Max Unit -12 -3 m V/ -1 100 n A -100 n A -0.4 -0.6 -1.5 V ID = -250 A, Referenced to 25 3 m...