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KDW258P - P-Channel 1.8V Specified PowerTrench MOSFET

Key Features

  • -9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V RDS(ON) = 14m @ VGS =-2.5V RDS(ON) = 20m @ VGS =-1.8V Rds ratings for use with 1.8 V logic High performance trench technology for extremely low RDS(ON) Low gate charge Low profile TSSOP-8 package TSSOP-8 Unit: mm 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power Dissipation for Single Operation (Note 1a) Power Dis.

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SMD Type ICIC P-Channel 1.8V Specified PowerTrench MOSFET KDW258P Features -9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V RDS(ON) = 14m @ VGS =-2.5V RDS(ON) = 20m @ VGS =-1.8V Rds ratings for use with 1.