KHP45N03LT Datasheet | Kexin Semiconductor

Features Low on-state resistance Fast switching. TO220 1Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain current (DC) Power Dissipation thermal resistance from junction to mounting base thermal resistance from junction to ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID PD Rth(j-mb) Rth(j-a) TJ, Tstg Rating 30 15 45 86 1.75 60 -55 to 175 Unit A W K/W K/W .kexin..cn 1 SDMIPDTTyyppee Electrical Characteristics Tj= 25 Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance - Forward transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Continuous Source Current (Diode Conduction) peak source (diode forward) current Diode Forward Voltage - Pulse test: PW 300 ìs duty cycle 2%.. Symbol VDSS VGS(th) IGSS IDSS r DS(on) gfs Qgt Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD Testconditons VGS = 0 V, ID = 0.25m A VDS = VGS, ID = 1m A VDS = 0 V, VGS = 5 V VDS = 30 V, VGS = 0 V VGS = 5 V, ID = 25 A VGS = 10V, ID = 25A VDS = 5V, ID = 25 A;TJ=175 VDS = 25 V; ID = 25 A VDS=24V,VGS=5V,ID=40A VDS=25V,VGS=0V,f=1MHz VDD =15V, ID =25A, VGS = 5V, RGEN =5 Tmb = 25 ; pulsed; tp IS = 25A, VGS = 0 V 10 s MOSFET Min Typ Max Unit 30 V 1 1.5 2 10 100 n A 0.05 10 20 24 16 21 m 8 16 3 n...