Download KI3437DV Datasheet PDF
Kexin Semiconductor
KI3437DV
Features - VDS (V) =-150V - ID =-1.4 A (VGS =-10V) - RDS(ON) < 750mΩ (VGS =-10V) - RDS(ON) < 790mΩ (VGS =-6V) ( SOT-23-6 ) 0.4+0.1 -0.1 6 54 1 23 +0.01 -0.01 +0.2 -0.1 0-0.1 +0.10.68 -0.1 +0.21.6 -0.1 +0.22.8 -0.1 +0.11.1 -0.1 MOSFET Unit: mm 0.15 +0.02 -0.02 1. Drain 2. Drain 3.Gate 4. Source 5. Drain 6. Drain - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single-Pulse Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Junction Storage Temperature Range Tc = 25 °C Tc = 70 °C Ta = 25 °C (Note.1,2) Ta = 70 °C (Note.1,2) L = 0.1 m H Tc = 25 °C Tc = 70 °C Ta = 25 °C (Note.1,2) Ta = 70 °C (Note.1,2) t ≤ 5 s (Note.3) Steady State Note.1: t = 5 s. Note.2: Surface Mounted on 1" x 1"...