Click to expand full text
SMD Type
Dual P-Channel 1.8-V (G-S) MOSFET KI5935DC
IC IC
Features
TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 50 90 30 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -1.8 2.1 1.1 -55 to 150 260 Max 60 110 40 /W Unit Symbol VDS VGS ID -4.1 -2.9 -15 -0.9 1.1 0.6 W 5 secs Steady State -20 8 -3.0 -2.
KI5935DC Datasheet
