KI7N10DY Datasheet | Kexin Semiconductor

Features - VDS (V) = 100V - ID = 7A (VGS = 10V) - RDS(ON) ＜ 350mΩ (VGS = 10V) SOP-8 +0.04 0.21 -0.02 MOSFET 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA TJ Tstg Rating 100 ±20 7 30 2 48 150 -55 to 150 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Maximum Body-Diode Continuous Current Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) IS VSD Test Conditions ID=250μA, VGS=0V VDS=80V, VGS=0V VDS=80V, VGS=0V, TC=85℃ VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=3.5A IS=7A,VGS=0V Pulse test ; pulse width≤300μs, duty cycle≤2% (TA=25°C Unless Otherwise Noted) - Marking Marking 7N10 Unit V A W ℃/W ℃ Min Typ Max Unit 1 μA ±100 n A 350 mΩ 0.8 1.3...