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KI8205T - Dual N-Channel High Density Trench MOSFET

Key Features

  • Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. ( SOT-23-6 ) 0.4+0.1 -0.1 Unit: mm 0.4 +0.21.6 -0.1 +0.22.8 -0.1 0.55 1 +0.01 2 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.11.1 -0.1 0-0.1 +0.10.68 -0.1 D1 G1 S1 D2 G2 S2 S1 D1/D2 S2 1 2 3 6 G1 5 D1/D2 4 G2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25.
  • 1 Drain Current-Continuou -Pulse.
  • 2 Drain-Source Diode Forw.

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SSMMDDTTyyppee MOSFET Dual N-Channel High Density Trench MOSFET KI8205T Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount p...

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ll trench design for low RDS(on). Rugged and reliable. Surface Mount package. ( SOT-23-6 ) 0.4+0.1 -0.1 Unit: mm 0.4 +0.21.6 -0.1 +0.22.8 -0.1 0.55 1 +0.01 2 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.11.1 -0.1 0-0.1 +0.10.68 -0.

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