• Part: KI8205T
  • Description: Dual N-Channel High Density Trench MOSFET
  • Category: MOSFET
  • Manufacturer: Kexin Semiconductor
  • Size: 592.51 KB
Download KI8205T Datasheet PDF
Kexin Semiconductor
KI8205T
Features Super high dense cell trench design for low RDS(on). Rugged and reliable. Surface Mount package. ( SOT-23-6 ) 0.4+0.1 -0.1 Unit: mm +0.21.6 -0.1 +0.22.8 -0.1 +0.01 2 -0.01 +0.2 -0.1 0.15 +0.02 -0.02 +0.11.1 -0.1 0-0.1 +0.10.68 -0.1 D1 G1 S1 D2 G2 S2 S1 D1/D2 S2 1 2 3 6 G1 5 D1/D2 4 G2 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 - 1 Drain Current-Continuou -Pulse - 2 Drain-Source Diode Forward Current - 1 Maximum Power Dissipation TA=25 - 1 TA=75 Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient Symbol VDS VGS ID IDM IS TJ,TSTG Rth JA - 1 Surface Mounted on FR4 Board , t 10sec . - 2 Pulse width limited by maximum junction temperature. Rating 20 12 4.3 21.5 1.7 1.25 0.75 - 55 to 150 100 Unit V V A A A...