Kexin Electronics KMBT3906
PNP Transistors
FEATURES
+0.1 2.4-0.1 Epitaxial planar die construction +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector- Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current- Continuous Collector Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, Tstg Rating -40 -40 -5 -0.2 0.3 -55 to 150 Unit V V V A WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector - base breakdown voltage Collector - emitter breakdown voltage Emitter- base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector- emitter saturation voltage Base - emitter saturation voltage Delay time Rise time Storage time Fall time Transition frequency Symbol VCBO VCEO VEBO IcBO IcEO IEBO hFE Ic= -100 ìA Ic= -1 mA IE= -100 ìA Testconditons IE=0 IB=0 IC=0 Min -40 -40 -5 -0.1 -50 -0.1 100 60 -0.3 -0.95 35 35 22...