KMZ6005E Datasheet | Kexin Semiconductor

Features ƽ VDS (V) = 600V ƽ ID = 20m A ƽ RDS(ON) ˘ 700 ȍ (VGS = 0 V) ƽ Fast Switching Speed ƽ Ro HS pliant ƽ Halogen-free available +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Drain-Source Voltage Drain-Gate Voltage[ Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Soldering Temperature Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID IDM PD Rth JA TL TJ Tstg Rating 600 600 ±20 20 80 500 250 300 150 -55 to 150 Unit V m A m W ć/W ć .kexin..cn 1 SMD Type N-Channel MOSFET DMZ6005E (KMZ6005E) Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltage Saturated Drain-to-Source Current Drain-to-Source Leakage Current Gate-Body Leakage Current Gate-to-Source Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage Symbol VDSS IDSS ID(OFF) IGSS VGS(OFF) RDS(On) g FS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VSD Test Conditions ID=250 A, VGS=-5V VGS=0V, VDS=25V VDS=600V, VGS=-5V VDS=600V, VGS=-5V ,TJ = 125 VDS=0V, VGS=±20V VDS=3V , ID=8 u A VGS=0V, ID=3m A VDS=10V, ID=5m A VGS=-5V, VDS=25V, f=1MHz VGS=-5~5V, VDS=300V, ID=7m A VGS = -5V~5V VDD = 300V, ID=7m A RG = 20 IS=3m...