Download KO4496 Datasheet PDF
Kexin Semiconductor
KO4496
Features - VDS (V) = 30V - ID = 10 A (VGS = 10V) - RDS(ON) < 19.5mΩ (VGS = 10V) - RDS(ON) < 26mΩ (VGS = 4.5V) SOP-8 +0.040.21 -0.02 MOSFET Unit:mm 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range L=0.1m H TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS IDM IAR EAR Rth JA Rth JL TJ Tstg Rating 30 ±20 10 7.5 50 17 14 3.1 2 40 75 24 150 -55 to 150 Unit V A m J W ℃/W ℃ .kexin..cn 1 SMD Type MOSFET N-Channel MOSFET AO4496 (KO4496) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown...