KO4815 Datasheet | Kexin Semiconductor

Features - VDS (V) = -30V - ID = -8 A (VGS = -20V) - RDS(ON) ＜ 18mΩ (VGS = -20V) - RDS(ON) ＜ 20mΩ (VGS = -10V) - ESD Rating: 2KV HBM D1 D2 MOSFET Unit:mm 1.50 0.15 1 S2 2 G2 3 S1 4 G1 5 D1 6 D1 7 D2 8 D2 G1 G2 S1 S2 - Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range TA=25℃ TA=70℃ TA=25℃ TA=70℃ t ≤ 10s Steady-State Symbol VDS VGS IDM PD Rth JA Rth JL TJ Tstg Rating -30 ±25 -8 -6.9 -40 2 1.44 62.5 110 40 150 -55 to 150 Unit V A W ℃/W ℃ .kexin..cn 1 SMD Type MOSFET Dual P-Channel MOSFET AO4815 (KO4815) - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body...