KQB2N30
KQB2N30 is 300V N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
2.1A, 300 V. RDS(ON) = 3.7 @ VGS = 10 V Low gate charge (typical 3.7n C) Low Crss(typical 3.0p F) Fast switching 100% avalanche tested lmproved dv/dt capability
+ 5 .2 8 0.2 -0.2
+ 8 .7 0.2 -0.2
TO-263
+0.2
4.57 +0.1
-0.2
1.27-0.1
Unit: mm
+ 1 .2 7 0.1 -0.1
+ 0 .2 -0.2
1.27+0.1 -0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1 -0.1
+ 2 .5 4 0.2 -0.2
0.4+0.2 -0.2
.
11Ggaattee 22Ddrraaiinn 33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Drain Current Continuous (TC=25 ) Drain Current Continuous (TC=100 ) Drain Current Pulsed
- 1 Gate-Source Voltage Single Pulsed Avalanche Energy- 2 Avalanche Current
- 1 Repetitive Avalanche Energy
- 1 Peak Diode Recovery dv/dt
- 3 Power dissipation @ TA=25 Power dissipation @ TC=25
Derate above 25 Operating and Storage Temperature Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
- 4 Thermal Resistance Junction to Ambient
Symbol VDSS
IDM VGSS EAS IAR EAR...
