Kexin Electronics KST8050S
NPN Transistors
FEATURES
2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 0.5 0.3 150 -55 to 150 Unit V V V A WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons IC = 100 ìA , IE = 0 IC = 1mA , IB = 0 IE = 100 ìA , IC = 0 VCB = 40 V , IE = 0 VCE = 20 V , IB = 0 VEB = 5 V , IC = 0 VCE = 1 V , IC = 50 mA VCE = 1 V , IC = 500 mA IC = 500 mA , IB = 50 mA IC = 500 mA ,...