Kexin Electronics KST8550S
PNP Transistors
FEATURES
+0.1 2.4-0.1 Collector current: IC-=0.5A +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -25 -5 -0.5 0.3 150 -55 to 150 Unit V V V A WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE Testconditons IC=-100 A, IE=0 IC=-1mA, IB=0 IE=-100 A, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-3V, IC=0 VCE=-1V, IC=-50mA VCE=-1V, IC=-500mA Min -40 -25 -5 Typ +0.1 0.38-0.1 0-0.1 Max Unit V V V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturatio...