Download KTD2017 Datasheet PDF
Kexin Semiconductor
KTD2017
KTD2017 is N-Channel Silicon MOSFET manufactured by Kexin Semiconductor.
Features Low ON resistance. 2.5V drive. Mounting height 1.1mm posite type, facilitating high-density mounting. TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current(DC) Drain Current (pulse) (PW 10ìs) Allowable Power Dissipation Total Dissipation Channel Temperature Tch Storage Temperature Tstg -55 to +150 .kexin..cn 1 SMD Type ICIC Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Static Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward...