KTD2017
KTD2017 is N-Channel Silicon MOSFET manufactured by Kexin Semiconductor.
Features
Low ON resistance. 2.5V drive. Mounting height 1.1mm posite type, facilitating high-density mounting.
TSSOP-8
Unit: mm
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1
5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
VGSS
Drain Current(DC)
Drain Current (pulse)
(PW 10ìs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Tch
Storage Temperature
Tstg
-55 to +150
.kexin..cn 1
SMD Type
ICIC
Electrical Characteristics Ta = 25
Parameter Drain-to Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Static Drain to Source On-state Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward...