Datasheet4U Logo Datasheet4U.com

KTD2017 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current(DC) ID 5 A Drain Current (pulse) (PW 10ìs) IDP 20 A Allowable Power Dissipation PD 0.8 W Total Dissipation PT 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KTD2058 NPN Transistor SeCoS
KTD2058 Silicon NPN Power Transistors Inchange Semiconductor
KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR KEC
KTD2059 Silicon NPN Power Transistors Inchange Semiconductor
KTD2059 TRIPLE DIFFUSED NPN TRANSISTOR KEC

Other Datasheets by Kexin Semiconductor

Part Number Description
KTD1302 NPN Transistors
KTD1304 NPN Transistors
KTD1304S NPN Transistors
KTD1898 NPN Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type ICIC N-Channel Silicon MOSFET KTD2017 Features Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. TSSOP-8 Unit: mm 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current(DC) ID 5 A Drain Current (pulse) (PW 10ìs) IDP 20 A Allowable Power Dissipation PD 0.8 W Total Dissipation PT 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 www.kexin.com.