KX020N06 Datasheet | Kexin Semiconductor

Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V) RDS(ON) 340m (VGS = 4V) SOT- 89 4.50±0.1 1.80±0.1 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 DRAIN GATE ∗2 ∗1 SOURCE 3.00±0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range Sy mb ol VD S VG S ID I DM Rth JA Rthc TJ , TSTG Rating 60 ±2 ±8 500 2 250 62 .5 -55 to 150 Unit V A W /W .kexin..cn 1 SMD Type MOSFIECT Electrical Characteristics Ta = 25 P ara me ter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage S ym bo l VDS S IDS S IG SS VG S (t h ) RDS ( On) Ciss Cos s C rs s Qg Qgs Qgd td(on) tr td (o ff ) tf VS...