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KX020N06 - Silicon N-channel MOSFET

Key Features

  • VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V) RDS(ON) 340m (VGS = 4V) SOT- 89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 DRAIN GATE ∗2 ∗1 SOURCE 3.00±0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Re.

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SMD Type MOSFIECT Silicon N-channel MOSFET KX020N06 Features VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V) RDS(ON) 280m (VGS = 4.5V) RDS(ON) 340m (VGS = 4V) SOT- 89 4.50±0.1 1.80±0.1 123 0.48±0.1 0.53±0.1 2.50±0.1 4.00±0.1 Unit:mm 1.50 ±0.1 0.44±0.1 0.80±0.1 2.60±0.1 0.40±0.1 DRAIN GATE ∗2 ∗1 SOURCE 3.00±0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range Sy mb ol VD S VG S ID I DM PD RthJA Rthc TJ , TSTG Rating 60 ±2 ±8 500 2 250 62 .5 -55 to 150 Unit V A W /W www.kexin.com.