KX3N80 Datasheet | Kexin Semiconductor

Features - VDS (V) = 800V - ID = 3 A (VGS = 10V) - RDS(ON) ＜ 5Ω (VGS = 10V) - Low gate charge ( typical 15 n C) - Low Crss ( typical 7.0 p F) - Fast switching 13.08 ± 0.20 (1.00) 9.20 ± 0.20 (1.46) (45 ) (3.00) (3.70) 15.90 ± 0.20 18.95MAX. 10.08 ± 0.30 1.27 ± 0.10 1.52 ± 0.10 2.54TYP [2.54 ± 0.20 ] 0.80 ± 0.10 2.54TYP [2.54 ± 0.20 ] 10.00 ± 0.20 +0.10 - 0.05 2.40 ± 0.20 1 GATE 2 DRAIN 3 SOURCE - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Derate above 25°C Single Pulsed Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note.2) Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Thermal Resistance, Case-to-Sink Junction Temperature Tc=25℃ Tc=100℃ Tc=25℃ Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Storage Temperature Range Symbol VDS VGS IDM IAR PD EAS EAR dv/dt Rth JA Rth JC Rth JCS TJ Tstg Note.1: L = 67m H, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Note.2: ISD ≤ 3A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ =...