KX3N80 Description
DIP Type MOSFET N-Channel MOSFET KX3N80 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 4.50 ± 0.20 1.30 +0.10 0.05 2.80 ± 0.10 (1.70) 1.30.
KX3N80 Key Features
- VDS (V) = 800V
- ID = 3 A (VGS = 10V)
- RDS(ON) ＜ 5Ω (VGS = 10V)
- Low gate charge ( typical 15 nC)
- Low Crss ( typical 7.0 pF)
- Fast switching