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KX7N10L - N-Channel MOSFET

Key Features

  • VDS (V) = 100V ID = 1.7 A (VGS = 10V) RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A D ! " !" G! " " ! S SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 1 2 3 2.9 4.6 0.70+0.1 -0.1 0.90+0.2 -0.2 7.00+0.3 -0.3 1.Gate 2.Drain 3.Source 4.Drain Absolute Maximum Ratings Ta = 25 Param ete r Drain-Source Voltage Gate-Source Voltage Continuous Drain Current - Continuous (TC = 25°C) - Continuous (TC= 70°C) Pulsed Drain Current Single Pulsed Aval.

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SMD Type N-Channel MOSFET KX7N10L MOSFET 0.1max +0.05 0.90 -0.05 +0.15 1.65 -0.15 Features VDS (V) = 100V ID = 1.7 A (VGS = 10V) RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A D ! " !" G! " " ! S SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 1 2 3 2.9 4.6 0.70+0.1 -0.1 0.90+0.2 -0.2 7.00+0.3 -0.3 1.Gate 2.Drain 3.Source 4.Drain Absolute Maximum Ratings Ta = 25 Param ete r Drain-Source Voltage Gate-Source Voltage Continuous Drain Current - Continuous (TC = 25°C) - Continuous (TC= 70°C) Pulsed Drain Current Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Power Dissipation (T = 25°C) - Derate above 25°C Thermal Resistance.