KX8N60CF
KX8N60CF is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 600V
- ID = 7.5 A (VGS = 10V)
- RDS(ON) ＜ 1.2 Ω (VGS = 10V)
- Fast switching
- Improved dv/dt capability
15.87 ±0.20 3.30 ±0.20
TO-220F
±0.20
3.18±0.20 φ
±0.20
2.54 ±0.20
Unit: mm 0.70 ±0.20
6.68 ±0.20
12.42 ±0.20
1.47max
9.75 ±0.20
2.54typ 2.54typ
1 23 0.80 ±0.20
0.50 ±0.20
2.76 ±0.20
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Tc=25℃ Tc=100℃
Pulsed Drain Current
Avalanche Current
Power Dissipation
Tc=25℃
Derate above 25℃
Single Pulsed Avalanche Energy (Note.1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note.2)
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Junction Temperature Storage Temperature Range
Symbol VDS...
