KX90N06
Features
- VDS (V) = 70V
- ID = 80 A (VGS = 10V)
- RDS(ON) ＜ 7.2mΩ (VGS = 10V)
- Ultra Low On-Resistance
N-Channel MOSFET KX90N06
TO-220
9.90 ± 0.20 (8.70)
ø3.60 ± 0.10
(1.70) 1.30 ± 0.10
9.20 ± 0.20 (1.46)
(45 )
13.08 ± 0.20 (1.00)
1.27 ± 0.10
1.52 ± 0.10
2.54TYP [2.54 ± 0.20 ]
0.80 ± 0.10
2.54TYP [2.54 ± 0.20 ]
10.00 ± 0.20
(3.00) (3.70) 15.90 ± 0.20 18.95MAX.
2.80 ± 0.10
10.08 ± 0.30
MOSFET
4.50 ± 0.20
+0.10
- 0.05
+0.10
- 0.05
2.40 ± 0.20
1 GATE 2 DRAIN 3 SOURCE
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery Voltage Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range
Tc=25℃ Tc=100℃
Tc=25℃
Symbol VDS...
