KXF3055 Datasheet | Kexin Semiconductor

Features - VDS (V) = 60V - ID = 5.3 A (VGS = 10V) - RDS(ON) ＜ 60mΩ (VGS = 10V) - RDS(ON) ＜ 80mΩ (VGS = 4.5V) 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature Range Symbol Rating Unit ±20 ℃ Tstg -55 to 150 .kexin..cn 1 SMD Type N-Channel MOSFET KXF3055 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Diode Forward Voltage Symbol VDSS IDSS IGSS VGS(th) RDS(On) g FS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VSD Test Conditions ID=250μA, VGS=0V VDS=48V, VGS=0V VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=5.3A VGS=4.5V, ID=4.7A VDS=5V, ID=4.7A VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=40V, ID=4.7A VDS=25V, ID=1A,RG=6Ω IS=2A,VGS=0V MOSFET Min Typ Max...