KXMS6004FF
KXMS6004FF is N-Channel Self Protected Enhancement Mode MOSFET manufactured by Kexin Semiconductor.
Features
ƽ pact high power dissipation package ƽ Low input current ƽ Logic Level Input (3.3V and 5V) ƽ Short circuit protection with auto restart ƽ Over voltage protection (active clamp) ƽ Thermal shutdown with auto restart ƽ Over-current protection ƽ Input Protection (ESD) ƽ High continuous current rating
+0.1 2.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
Unit: mm
0.1 +0.05 -0.01
1. IN 2. Source 3. Drain
0-0.1 +0.1 0.38
-0.1
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter Drain-Source Voltage Drain-Source voltage for short circuit protection Continuous input Voltage Continuous input Current -0.2VİVINİ6V VIN<-0.2V or VIN>6V Pulsed Drain Current @ VIN=3.3V Pulsed Drain Current @ VIN=5V Power Dissipation at TA = 25ć (a) Linear derating factor Power Dissipation at TA = 25ć (b) Linear derating factor Continuous source current (Body Diode) (a) Pulsed dource current (Body Diode) Unclamped single pulse inductive energy, Tj=25ć, ID=0.5A, VDD=24V Electrostatic discharge (Human body model) Charged device model Thermal Resistance.Junction- to-Ambient (a) Thermal Resistance.Junction- to-Ambient (b) Thermal Resistance.Junction- to-Case (c) Junction Temperature Storage Temperature Range
Symbol VDS
VDS(SC) VIN
PD IS ISM EAS VESD VCDM Rth JA Rth JA Rth JC TJ Tstg
Rating 60 36
-0.5 … +6
No limit |IIN|İ2
2 2.5 0.83 6.66 1.5 12 1 5
4000 1000 150
83 44 150 -55 to 150
Unit V m A
A W m W/ć W m W/ć A m J V
ć/W
ć
Note: (a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board,in still air conditions. (b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. (c) Thermal resistance from junction to the mounting surface of the drain pin.
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