KXP20N15 Datasheet | Kexin Semiconductor

Features - VDS (V) = 150V - RDS(ON) ≤ 0.13Ω (VGS = 10V) MOSFIECT 1 Gate 2 Drain 3 Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate source voltage Drain Current - Continuous Drain Current - Pulsed (Note 2) Power dissipation @TC=25 ℃ (Note 1) - Derate above 25℃ Thermal resistance, junction - ambient Operating and storage temperature Symbol VDSS VGS ID IDM Rth JA Tj , Tstg Rating 150 ±20 20 60 112 0.9 62.5 -55 to +150 Unit V V A A W W/℃ ℃/W ℃ Note:1.Power rating when mounted on FR-4 glass epoxy printed circuit board using remended footprint. 2.Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 1 .kexin..cn SDMIPDTTypypee MOSFIECT N-Channel MOSFET KXP20N15 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body leakage current Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Forward Voltage Reverse Recovery Time Maximum Body-Diode Continuous Current Symbol Test conditions BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ±20 V, VDS = 0...