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KXT5401 - Surface Mount PNP Silicon Transistor

Key Features

  • +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction- to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R JA Rating -160 -150 -5 -500 1.2 104 150 -65 to +150 Unit V V V mA W /W Tj Tstg Electrical Characteristics Ta = 25 Parameter Coll.

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SMD Type Transistors Surface Mount PNP Silicon Transistor KXT5401 (CXT5401) SOT-89 4.50 +0.1 -0.1 Unit: mm 1.50 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 High current (max. 500mA). Low voltage (max. 150 V). +0.1 4.00-0.1 Features +0.1 0.80-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction- to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R JA Rating -160 -150 -5 -500 1.