Kexin Electronics MBD330DWT1
Dual Schottky Barrier Diodes
| Part No. | MBD330DWT1 |
|---|---|
| Datasheet | MBD330DWT1 Download |
| Manufacturer | Kexin Electronics |
| Description | Dual Schottky Barrier Diodes |
| Buy | Stock & Price |
FEATURES
Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.15 2.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0.1 1.25 -0.1 0.1max +0.05 0.95 -0.05 Absolute M axim um R atings Ta = 25 Param eter MBD110DW T1 Reverse Voltage MBD330DW T1 MBD770DW T1 Forward Power Dissipation TA = 25 Junction Tem perature Storage Tem perature Range Sym bol VR PF TJ T stg V a lu e 7 30 70 120 -55 to +125 -55 to +150 U n it Vdc mA 1 SMD Type MBD110DWT1 MBD330DWT1;MBD770DWT1 DiodesELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol Conditions Min Typ Max Unit MBD110DWT1 7.0 10 Reverse Breakdown Voltage MBD330DWT1 VBR(R) IR = 10 A 30 Volts MBD770DWT1 70 Diode Capacitance MBD110DWT1 CT VR = 0, f = 1.0 MHz 0.88 1.0 pF Total Capacitance MBD330DWT1 VR = 15 Volts, f = 1.0 MHz CT MBD770DWT1 VR = 20 Volts, f = 1.0 MHz 0.9 1.5 pF 0.5 1.0 MBD110DWT1 VR = 3.0 V 0.02 0.25 A Reverse Leakage MBD330DWT1 IR VR = 25 V 13 200 nAdc MBD770DWT1 V...