Kexin Electronics MBR20100F
Schottky Barrier Diodes
| Part No. | MBR20100F |
|---|---|
| Datasheet | MBR20100F Download |
| Manufacturer | Kexin Electronics |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
FEATURES
● LOW VF.● High Operating Junction Temperature.
● High Switching Speed.
● High Reliability. 1 3 2, 4 15.87 ±0.20 3.30 ±0.20 TO-220F ±0.20 3.18±0.20 φ ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max 2.54typ 2.54typ 2.76 ±0.20 9.75 ±0.20 0.80 ±0.20 0.50 ±0.20
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter DC Blocking Voltage @ Ir=0.2mA DC Forward Current Peak forward surge current Junction Temperature Storage temperature range Symbol Rating Unit VRRM 100 V IF(AV) 10 A IFSM 150 TJ 175 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Reverse breakdown voltage Symbol Test Conditions VRM IR= 0.2 m A Forward voltage Reverse voltage leakage current VF IF= 10 A ,Tc=25℃ (Note.1) IR VR= 100V,Tc=25℃(Note.1) Note.1: Pulse Test: Pulse Width = 300 us, Duty Cycle ≤ 2.0%. Min Typ Max Unit 100 V 850 mV 10 uA 1 DIP Type Diodes Schottky Barrier Diodes MBR20100F● Typical Characterisitics IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IR , REVERSE CURRENT (mA) 50 20...
