MBR390 Datasheet | Kexin Semiconductor

Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ Absolute Maximum Ratings and Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%. Parameter Symbol MBR 320 MBR 330 MBR 340 MBR 350 MBR 360 MBR 370 MBR 380 MBR 390 MBR 3100 Unit Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC Blocking Voltage VRRM VRMS VDC 20 30 40 50 60 70 80 90 100 14 21 28 35 42 49 56 63 70 20 30 40 50 60 70 80 90 100 Maximum average forward rectified current 0.375”(9.5mm) lead length(see fig.1) Peak...