MBRD10150CT Datasheet | Kexin Semiconductor

Features - Low power loss,high efficiency. High surge capacity - For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications. - Metal silicon junction,majority carrier conduction. - High current capability,low forward voltage drop. - Guard ring for over voltage protection. TO-252 1 3 Diodes 1.Anode 2.Cathode 3. Anode - Absolute Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD MBRD Symbol 1040 1045 1050 1060 1080 1090 10100 10150 10200 Unit CT CT CT CT CT CT CT CT CT Maximum repetitive peak reverse voltage VRRM 40 45 50 60 80 90 100 150 200 Maximum RMS voltage VRMS 28 31.5 35 70 105 140 Maximum DC Blocking Voltage 40 45 50 90 100 150 200 Maximum average forward rectified current IF(AV) Peak forward surge current:8.3ms A single half sine-wave superimposed on IFSM 150 rated load (JEDEC method) Maximum forward voltage at 5A per leg Maximum DC reverse current TJ= 25℃ at rated DC blocking voltage TJ=...