Kexin Electronics MBRF20100CT
Schottky Diodes
FEATURES
● Low forward voltage drop● High frequency properties and switching speed
● Guard ring for over-voltage protection 1. Anode 2.Cathode 3. Anode 4.70 0.20 TO-220F 10.16 0.20 (7.00) ø3.18 0.10 Unit:mm 2.54 0.20 (0.70) 3.30 0.10 6.68 0.20 15.87 0.20 15.80 0.20 9.75 0.30 (1.00x45 ) MAX1.47 0.80 0.10 (30 ) 0.35 0.10 #1 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 9.40 0.20 0.50 +0.10 –0.05 2.76 0.20
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Repetitive Reverse Voltage DC Reverse Voltage DC Forward Current Tc = 105℃ Peak forward surge current @ 60Hz Sine Half-Sine Wave Thermal Resistance, Junction to Case (per diode) Junction Temperature Storage temperature range Symbol VRRM VR IF(AV) IFSM RθJC TJ Tstg Rating 100 100 20 150 2.8 150 -65 to 150 Unit V A °C/W ℃●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage (Note.1) Reverse voltage leakage