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MCR100-6 - Silicon Controlled Rectifier

Key Features

  • s.
  • Current-IGT : 200 μA.
  • ITRMS : 0.8 A.
  • VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V.
  • Operating and storage junction temperature range.
  • TJ，Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.46 0.1.
  • Electrical Characteristics Ta = 25℃ Parameter On State Voltage (Note.1) Gate Trigger Voltage Peak Repetitive forward and MCR100-6/6R rever seblocking voltage MCR100-8/8R Holding current Peak forward or reverse blocking Current Gate.

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SMD Type Silicon Controlled Rectifier MCR100 (KCR100) Thyristor ■ Features ● Current-IGT : 200 μA ● ITRMS : 0.8 A. ● VRRM/ VDRM : MCR100-6: 400 V MCR100-6R: 400 V MCR100-8: 600 V MCR100-8R: 600 V ● Operating and storage junction temperature range ● TJ，Tstg : -55℃ to +150℃ 1.70 0.1 0.42 0.1 0.46 0.1 ■ Electrical Characteristics Ta = 25℃ Parameter On State Voltage (Note.1) Gate Trigger Voltage Peak Repetitive forward and MCR100-6/6R rever seblocking voltage MCR100-8/8R Holding current Peak forward or reverse blocking Current Gate trigger current Symbol VTM VGT VDRM VRRM IH IDRM IRRM A2 A1 IGT A B Test Conditions ITM= 1 A VAK= 7V IDRM= 10 uA VAK=7V,IH=20mA VAK=Rated VDRM or VRRM VAk= 7 V Note.