The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
Transistors
NPN Epitaxial Silicon Transistor MJD47;MJD50
Features
Load Formed for Surface Mount Application Straight Lead
+ 0.29 .7 0 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+ 0.151 . 5 0 -0.15
+05.55 .15 -0.15
0.80+0.1 -0.1
0.127 max
3.80
+2.65 0.25 -0.1
+0.50 0.15 -0.15
+1.50 0.28 -0.1
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter Collector-Emitter Voltage MJD47
MJD50 Collector-Emitter Voltage MJD47
MJD50 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25 ) Collector Dissipation (Ta=25 ) Junction Temperature Storage Temperature
Symbol VCBO
VCEO
VEBO IC ICP IB PC
TJ TSTG
Rating 350 500 250 400 5 1 2 0.6 15 1.