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MJD47 - NPN Epitaxial Silicon Transistor

Key Features

  • Load Formed for Surface Mount.

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SMD Type Transistors NPN Epitaxial Silicon Transistor MJD47;MJD50 Features Load Formed for Surface Mount Application Straight Lead + 0.29 .7 0 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm + 0.151 . 5 0 -0.15 +05.55 .15 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +2.65 0.25 -0.1 +0.50 0.15 -0.15 +1.50 0.28 -0.1 2.3 4.60+0.15 -0.15 0.60+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Emitter Voltage MJD47 MJD50 Collector-Emitter Voltage MJD47 MJD50 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25 ) Collector Dissipation (Ta=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Rating 350 500 250 400 5 1 2 0.6 15 1.