MMBT2222 Datasheet | Kexin Semiconductor

Features - Epitaxial planar die construction. - plementary PNP type available(MMBT2907) +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.1 1.3 -0.1 Unit: mm 0.1+0.05 -0.01 +0.1 0.97 -0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Thermal resistance from junction to ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj, TSTG Rating 60 30 5 600 250 500 -55 to +150 - Electrical Characteristics Ta = 25℃ Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector cutoff current Emitter cutoff current DC current gain Symbol Test conditions V(BR)CBO IC = 10 μA, IE = 0 V(BR)CEO IC = 10 m A, IB = 0 V(BR)EBO IC = 10 μA, IC = 0 ICBO VCB=50V, IE=0 IEBO VEB= 3V, IC=0 VCE=10V, IC= 0.1m A h FE VCE=10V, IC= 150m A VCE=10V, IC= 500m A collector-emitter saturation voltage - base-emitter saturation voltage - Transition frequency Delay time Rise time Storage time Fall time IC = 150 m A; IB = 15 m A VCE(sat) IC = 500 m A; IB = 50 m A VBE(sat) f T td tr ts...