Kexin Electronics MMBT2907A
PNP Transistors
| Part No. | MMBT2907A |
|---|---|
| Datasheet | MMBT2907A Download |
| Manufacturer | Kexin Electronics |
| Description | PNP Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC 600 mA Power Dissipation PD 250 mW Thermal resistance from junction to ambient RθJA 500 ℃/W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Symbol Test conditions Collector-Base Breakdown Voltage V(BR)CBO IC = -100 μA, IE = 0 Collector-Emitter Breakdown Voltage* V(BR)CEO IC = -10 mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO IE = -100μA, IC = 0 Collector Cutoff Current ICBO VCB = -50 V, IE = 0 Collector Cutoff Current ICEX VCE = -30 V,VEB(off) =-0.5V VCE=-10V,IC=-0.1mA DC Current Gain VCE=-10V,IC=-1mA hFE VCE=-10V,IC=-10mA VCE=-10V,IC=-150mA VCE=-10V,IC=-500mA Collector-Emitter Saturation Voltage * VCE(sat) IC = -150 mA, IB = -15 mA IC = -500 mA, IB = -50 mA Base-Emitter Saturation Voltage * VBE(sat) IC = -150 mA...
