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MMSTA13 - NPN Surface Mount Darlington Transistor

Key Features

  • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating 30 30 10 300 200 625 -55 to +150 Unit V V V mA mW /W Electrical Characteristics.

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SMD Type Transistors NPN Surface Mount Darlington Transistor MMSTA13 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating 30 30 10 300 200 625 -55 to +150 Unit V V V mA mW /W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacit