MMSTA13 Datasheet | Kexin Semiconductor

Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating 30 30 10 300 200 625 -55 to +150 Unit V V V m A m W /W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain-Bandwidth Product Symbol Testconditons VCBO IC = 100 A, IE = 0 ICBO VCB = 30V, IE = 0 IEBO VCE = 10V, IC = 0 IC = 10m A, VCE = 5V h FE IC = 100m A, VCE =5V VCE(sat) IC = 100m A,...