Kexin Electronics MMSTA13
NPN Surface Mount Darlington Transistor
FEATURES
Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 CollectorABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating 30 30 10 300 200 625 -55 to +150 Unit V V V mA mW /WELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain-Bandwidth Product Symbol Testconditons VCBO IC = 100 A, IE = 0 ICBO VCB = 30V, IE = 0 IEBO VCE = 10V, IC = 0 IC = 10mA, VCE = 5V hFE IC = 100mA, VCE =5V VCE(sat) IC = 100mA, I