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MMSTA63 - PNP Surface Mount Darlington Transistor

Key Features

  • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating -30 -30 -10 -500 200 625 -55 to +150 Unit V V V mA mW /W Electrical Characterist.

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Other Datasheets by Kexin Semiconductor

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SMD Type Transistors PNP Surface Mount Darlington Transistor MMSTA63 Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating -30 -30 -10 -500 200 625 -55 to +150 Unit V V V mA mW /W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Produ