MMSTA63 Datasheet PDF

FEATURES

Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain 1 Emitter 2 Base 3 Collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Pd R JA Tj, TSTG Rating -30 -30 -10 -500 200 625 -55 to +150 Unit V V V mA mW /W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Symbol Testconditons VCBO IC = 100 A, IE = 0 ICBO VCB = -30V, IE = 0 IEBO VCE = -10V, IC = 0 IC = -10mA, VCE = -5V hFE IC = -100mA, VCE =5V VCE(sat) IC = -100mA, IB = -100 A VBE(sat) IC = -