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NFT1N60 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 600V.
  • ID = 0.4 A (VGS = 10V).
  • RDS(ON) ＜ 7.9Ω (VGS = 10V).
  • High switching speed.
  • Improved dv/dt capability N-Channel MOSFET NFT1N60 SOT-223 MOSFET 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous.

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SMD Type ■ Features ● VDS (V) = 600V ● ID = 0.4 A (VGS = 10V) ● RDS(ON) ＜ 7.9Ω (VGS = 10V) ● High switching speed ● Improved dv/dt capability N-Channel MOSFET NFT1N60 SOT-223 MOSFET 6.50±0.2 3.00±0.1 4 10b Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 1.6 ± 0.1 1.80 (max) 1 2 3 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain 0.02 ~ 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Tc = 25℃ Derate above 25℃ Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM EAS PD RθJA TJ Tstg Rating 600 ±30 0.4 1.6 52 3.3 0.026 37.