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NJM13003-1.63 - NPN Transistors

Key Features

  • s.
  • High voltage capability.
  • High speed switching.
  • Wide SOA.
  • ROHS compliant NPN Transistors NJM13003-1.63 TO-126 8.00 ±0.30 ø3.20 ±0.10 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 3.90 ±0.10 14.20MAX 11.00 ±0.20 Transistors Unit:mm 3.25 ±0.20 (1.00) (0.50) 1.75 ±0.20 13.06 ±0.30 16.10 ±0.20 2.28TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] 0.50 +0.10.
  • 0.05 1. Base 2. Collector 3. Emitter.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector.

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DIP Type ■ Features ● High voltage capability ● High speed switching ● Wide SOA ● ROHS compliant NPN Transistors NJM13003-1.63 TO-126 8.00 ±0.30 ø3.20 ±0.10 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 3.90 ±0.10 14.20MAX 11.00 ±0.20 Transistors Unit:mm 3.25 ±0.20 (1.00) (0.50) 1.75 ±0.20 13.06 ±0.30 16.10 ±0.20 2.28TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] 0.50 +0.10 –0.05 1. Base 2. Collector 3. Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range ■ Electrical Characteristics Ta = 25℃ Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 600 400 9 1.