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DIP Type
■ Features
● High voltage capability ● High speed switching ● Wide SOA ● ROHS compliant
NPN Transistors NJM13003-1.63
TO-126
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10 1.60 ±0.10 0.75 ±0.10
3.90 ±0.10
14.20MAX 11.00 ±0.20
Transistors
Unit:mm
3.25 ±0.20
(1.00)
(0.50) 1.75 ±0.20
13.06 ±0.30 16.10 ±0.20
2.28TYP [2.28±0.20]
#1
2.28TYP [2.28±0.20]
0.50
+0.10 –0.05
1. Base 2. Collector 3. Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range
■ Electrical Characteristics Ta = 25℃
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Rating 600 400 9 1.