NTD6N15
NTD6N15 is N-Channel MOSFET manufactured by Kexin Semiconductor.
Features
- VDS (V) = 150V
- ID = 6 A (VGS = 10V)
- RDS(ON) ＜ 300mΩ (VGS = 10V)
- Silicon Gate for Fast Switching Speeds
- Low Drive Requirement
+ 9.70 0.2 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
+ 1.50 0.15 -0.15
2.30 +0.1 -0.1
0.50 +0.8 -0.7
Unit: mm
+ 5.55 0.15 -0.15
+ 0.15 0 .5 0 -0.15
+0 1.50 .28 -0.1
0.80+0.1 -0.1
0.127 m ax
2.3 4 .60 +0.15
-0.15
0.60+ 0.1
- 0.1
+0 2.65 .25 -0.1
1 Gate 2 Drain 3 Source 4 Drain
- Absolute Maximum Ratings Ta = 25℃
Drain-Source Voltage
Parameter
Drain- Gate Voltage (RGS = 1mΩ)
Gate-Source Voltage
Gate-Source Voltage-Non- Repetitive
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Derate above 25°C
Power Dissipation
(Note.1)...
