Kexin Electronics NTD6N15
N-Channel MOSFET
| Part No. | NTD6N15 |
|---|---|
| Datasheet | NTD6N15 Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 150V● ID = 6 A (VGS = 10V)
● RDS(ON) ＜ 300mΩ (VGS = 10V)
● Silicon Gate for Fast Switching Speeds
● Low Drive Requirement D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Drain-Source Voltage Parameter Drain−Gate Voltage (RGS = 1mΩ) Gate-Source Voltage Gate-Source Voltage-Non−Repetitive Continuous Drain Current Pulsed Drain Current Power Dissipation Derate above 25°C Power Dissipation (Note.1) Derate above 25°C Power Dissipation (Note.2) Derate above 25°C Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Tc=25℃ Ta=25℃ Ta=25℃ (Note.1) (Note.2) Symbol VDS VDG VGS VGSM ID IDM PD PD PD RthJA RthJC TJ Tstg Rating 150 150 ±20 ±40 6 20 20 0.16 1.25 0.01 1.75 0.014 100 71.4 6.25 150 -65 to 150 Note.1: When surface mounted to an FR4 board using the minimum recommended pad size.
