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NTD6N15 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 150V.
  • ID = 6 A (VGS = 10V).
  • RDS(ON) ＜ 300mΩ (VGS = 10V).
  • Silicon Gate for Fast Switching Speeds.
  • Low Drive Requirement D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S.
  • Absolute Maximum Ratings Ta = 25℃ Dr.

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SMD Type MOSFET N-Channel MOSFET NTD6N15 ■ Features ● VDS (V) = 150V ● ID = 6 A (VGS = 10V) ● RDS(ON) ＜ 300mΩ (VGS = 10V) ● Silicon Gate for Fast Switching Speeds ● Low Drive Requirement D + 9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 4 + 1.50 0.15 -0.15 2.30 +0.1 -0.1 0.50 +0.8 -0.7 Unit: mm + 5.55 0.15 -0.15 + 0.15 0 .5 0 -0.15 +0 1.50 .28 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 +0 2.65 .25 -0.1 1 Gate 2 Drain 3 Source 4 Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Parameter Drain−Gate Voltage (RGS = 1mΩ) Gate-Source Voltage Gate-Source Voltage-Non−Repetitive Continuous Drain Current Pulsed Drain Current Power Dissipation Derate above 25°C Power Dissipation (Note.