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NTMS10P02R2 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-10 A (VGS =-10V).
  • RDS(ON) ＜ 14 mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 20mΩ (VGS =-2.5V).
  • Diode Exhibits High Speed, Soft Recovery D G S +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Maximum Operating Drain Current Pulsed Drain Current (Note.1) Power Dissipation.

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SMD Type P-Channel MOSFET NTMS10P02R2 (KTMS10P02R2) MOSFET ■ Features ● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON) ＜ 14 mΩ (VGS =-4.5V) ● RDS(ON) ＜ 20mΩ (VGS =-2.5V) ● Diode Exhibits High Speed, Soft Recovery D G S +0.04 0.21 -0.02 SOP-8 1.50 0.15 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Maximum Operating Drain Current Pulsed Drain Current (Note.1) Power Dissipation Ta = 25℃ Maximum Operating Power Dissipation Avalanche Energy (Note.2) TJ = 25°C Thermal Resistance.