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NTR4003N - N-Channel Enhancement MOSFET

Key Features

  • VDS (V) = 30V ID = 0.56 A (VGS = ±20V) RDS(ON) 1.5 (VGS = 4V) RDS(ON) 2 (VGS = 2.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current1 Steady State Continuous Drain Current1 t < 10 s Pulsed Drain Current tp = 10 us P.

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SMD Type N-Channel Enhancement MOSFET NTR4003N (KTR4003N) Features VDS (V) = 30V ID = 0.56 A (VGS = ±20V) RDS(ON) 1.5 (VGS = 4V) RDS(ON) 2 (VGS = 2.5V) +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 0.55 0.4 MOSFET Unit: mm 0.15 +0.02 -0.02 +0.2 1.1 -0.1 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1 Absolute Maximum Ratings Ta = 25 Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current1 Steady State Continuous Drain Current1 t < 10 s Pulsed Drain Current tp = 10 us Power Dissipation1 Steady State Power Dissipation1 t<5s Thermal Resistance.Junction- to-Ambient Steady State1 Thermal Resistance.Junction- to-Ambient t < 10 s1 Thermal Resistance.