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NTR4101P - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-20V.
  • ID =-3.2 A.
  • RDS(ON) ＜ 85mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 120mΩ (VGS =-2.5V).
  • RDS(ON) ＜ 210mΩ (VGS =-1.8V) S G +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 D.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @Steady State (N.

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SMD Type P-Channel MOSFET NTR4101P (KTR4101P) MOSFET ■ Features ● VDS (V) =-20V ● ID =-3.2 A ● RDS(ON) ＜ 85mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) ● RDS(ON) ＜ 210mΩ (VGS =-1.8V) S G +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.38 -0.1 D ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @Steady State (Note.1) Continuous Drain Current @t ≤ 10s Power Dissipation (Note.1) (Note.1) Continuous Drain Current (Note.2) Power Dissipation (Note.2) Pulsed Drain Current ESD Capability (Note 3) Thermal Resistance.Junction- to-Ambient (Note.