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RB521S-30 - Schottky barrier diode

Key Features

  • Extremely Small surface mounting type. (EMD2) IO = 200 mA guaranteed despite the size. Low VF. (VF = 0.40 V Typ. At 200 mA) +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3 -0.05 Unit: mm 0.6+0.1 -0.1 - 1.6+0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Absolute Maxim um Ratings Ta = 25 P aram eter DC reverse voltage Mean rectifying current Peak forward surge current.
  • Junction tem perature Storage temperature.
  • 60 Hz for 1 Sym bol VR IO IFSM Tj T stg Lim its 30 200 1 150 -40 to +125 U.

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SMD Type Schottky barrier diode RB521S-30 Diodes Features Extremely Small surface mounting type.(EMD2) IO = 200 mA guaranteed despite the size. Low VF.(VF = 0.40 V Typ. At 200 mA) +0.050.8 -0.05 SOD-523 1.2+0.1 -0.1 + +0.050.3 -0.05 Unit: mm 0.6+0.1 -0.1 - 1.6+0.1 -0.1 0.77max +0.050.1 -0.02 0.07max Absolute Maxim um Ratings Ta = 25 P aram eter DC reverse voltage Mean rectifying current Peak forward surge current * Junction tem perature Storage temperature * 60 Hz for 1 Sym bol VR IO IFSM Tj T stg Lim its 30 200 1 150 -40 to +125 Unit V mA A Electrical Characteristics Ta = 25 Param eter Forward voltage Reverse current Sym bol VF IR C o n d itio n s IF = 200 m A VR = 10V M in Typ Max U n it 0.6 V 1A Marking Marking B www.kexin.com.