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RHP020N06 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60V.
  • ID = 2 A (VGS = 10V).
  • RDS(ON) ＜ 200mΩ (VGS = 10V).
  • RDS(ON) ＜ 280mΩ (VGS = 4.5V).
  • RDS(ON) ＜ 340mΩ (VGS = 4V).
  • High speed switching DRAIN SOT-89 1.70 0.1 Unit:mm 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source GATE.
  • 2.
  • 1 SOURCE.
  • 1 ESD.

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SMD Type N-Channel MOSFET RHP020N06 (KHP020N06) MOSFET ■ Features ● VDS (V) = 60V ● ID = 2 A (VGS = 10V) ● RDS(ON) ＜ 200mΩ (VGS = 10V) ● RDS(ON) ＜ 280mΩ (VGS = 4.5V) ● RDS(ON) ＜ 340mΩ (VGS = 4V) ● High speed switching DRAIN SOT-89 1.70 0.1 Unit:mm 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source GATE *2 *1 SOURCE *1 ESD PROTECTION DIODE *2 BODY DIODE ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Symbol VDS VGS ID IDM PD Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range (Note.1) Note.1:When mounted on a 40X40X0.7mm ceramic board RthJA TJ Tstg Rating 60 ±20 ±2 ±8 0.5 2 250 62.5 150 -55 to 150 Unit V A W ℃/W ℃ www.kexin.com.