Kexin Electronics SB2100
Schottky Diodes
| Part No. | SB2100 |
|---|---|
| Datasheet | SB2100 Download |
| Manufacturer | Kexin Electronics |
| Description | Schottky Diodes |
| Buy | Stock & Price |
FEATURES
● Metal silicon junction,majority carrier conduction● Low power loss,high efficiency
● High forward surge current capability DO-214AC(SMA) 2.126 1.397 2 4.597 3.988 2.896 2.22 1 2.489 2.02 Unit: mm 4.32 4.12 5.668 4.925 2.438 1.981 2.75 2.55 5.87 5.67 Recommended Land Pattern 1.524 0.762 0.203 0.051 0.305 0.152
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Symbol SB 220 SB 230 SB 240 SB 250 SB 260 SB 270 SB 280 SB 290 SB 2100 SB 2150 SB 2200 Unit Peak Repetitive Peak Reverse Voltage RMS Reverse Voltage DC Blocking Voltage VRRM 20 30 40 50 60 70 80 90 100 150 200 VR(RMS) 14 21 28 35 42 49 56 63 70 105 140 V VR 20 30 40 50 60 70 80 90 100 150 200 Average Rectified Current IFAV 2 A Peak Forward Surge Current @=8.3ms IFSM 60 Forward voltage VF 0.55 0.7 0.85 0.95 V Reverse voltage leakage current Ta = 25℃ Ta = 100℃ IR 0.5 10 5 0.2 mA 2 Junction capacitance (Note.1) Cj 220 80 pF Thermal Resistance Junction to Ambient (Note.2) RθJA 50 ℃/W Junction Temperature Storage Temperature range TJ -65 to 125 -65 to 150 Tstg -65 to 150 ℃ Note.1: Measured at 1MHz and applied reverse voltage of 4.0V D.C.